![]() ![]() High Total Power Dissipation: ON Semiconductor shall have the right 9012 transistor datasheet terminate this Agreement upon written notice to Licensee if: Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement. In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor. Material of transistor: Si Polarity: PNP Total Devise power dissipation PD: 450 mW(at. UNISONIC TECHNOLOGIES CO., LTD.Ģ of 3 QW-RB. Package: TO-92, 1-emitter, 2-base, 3-collector. Characteristics of S9012 Transistor Type: PNP Collector-Emitter Voltage, max: -25 V Collector-Base Voltage, max: -40 V Emitter-Base Voltage, max: -5 V. ![]() Note: Complete Technical Details can be found at the S8550 transistor datasheet given at the end of this article. MIN This datasheet has been downloaded from at this page. Commonly used as Class B Push-pull transistors Available in To-92 Package. ![]() Operating Junction Temperature (Tj): 135☌Transition Frequency (ft): 50MHzCollector Capacitance (Cc): 3.5pFForward Current Transfer Ratio (hFE), MIN: 64Noise Figure, dB: -Package: TO92. ![]() 9012Datasheet, Equivalent, Cross Reference SearchType Designator: 9012Material of Transistor: SiPolarity: PNPMaximum Collector Power Dissipation (Pc): 0.4WMaximum Collector-Base Voltage Vcb : 25VMaximum Collector-Emitter Voltage Vce : 25VMaximum Emitter-Base Voltage Veb : 3VMaximum Collector Current Ic max : 0.4AMax. ![]()
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